Gast ::
| Hauptseite > Publikationsdatenbank > Fabrication of single-electron shuttling channels in a silicon CMOS fab using high-throughput electron beam lithography |
| Hauptseite > Publikationsdatenbank > Fabrication of single-electron shuttling channels in a silicon CMOS fab using high-throughput electron beam lithography |
| Contribution to a conference proceedings/Journal Article | FZJ-2025-05799 |
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2025
SPIE
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Please use a persistent id in citations: doi:doi.org/10.1117/12.3063352 doi:10.1117/12.3063352 doi:doi.org/10.1117/12.3063352
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