TypAmountVATCurrencyShareStatusCost centre
APC3000.000.00EUR95.39 %(Zahlung erfolgt)ZB
APC145.000.00EUR4.61 %(Zahlung erfolgt)236000
Sum3145.000.00EUR   
Total3145.00     
Journal Article FZJ-2026-00214

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GeSn quantum wells as a platform for spin-resolved hole transport

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2025
Springer Nature London

Communications materials 6(1), 216 () [10.1038/s43246-025-00934-9]

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Abstract: The nascent group IV GeSn alloys are highly attractive for spintronics applications, including quantum computing, due to their ability to enable highly scalable fabrication and all-electrical spin manipulation. In this work, we conduct an in-depth study of a two-dimensional hole gas in a Ge/GeSn quantum well, exhibiting the integer quantum Hall effect and distinct Shubnikov-de Haas oscillations. Emphasis is given to the determination of the Landé g-factor and its pronounced anisotropy in this two-dimensional system, revealing values significantly higher than those in conventional Ge or SiGe/Ge systems. Moreover, by modeling the spin-orbit interaction using the Iordanskii-Lyanda-Geller-Pikus theory, crucial cubic Rashba spin-orbit interaction coefficients, are extracted and their significance is highlighted. This work provides the experimental validation of the theoretically predicted enhancements in spin-orbit interaction and g-factors in GeSn alloys compared to Ge. Additionally, it delivers essential parameters for the design of hole spin devices, such as hole qubits, utilizing GeSn-based structures on the Si platform.

Classification:

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
Research Program(s):
  1. 5222 - Exploratory Qubits (POF4-522) (POF4-522)
  2. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)

Appears in the scientific report 2025
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Medline ; Creative Commons Attribution-NonCommercial-NoDerivs CC BY-NC-ND 4.0 ; DOAJ ; OpenAccess ; Article Processing Charges ; Clarivate Analytics Master Journal List ; DOAJ Seal ; Emerging Sources Citation Index ; Fees ; IF >= 5 ; JCR ; SCOPUS ; Web of Science Core Collection
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 Record created 2026-01-12, last modified 2026-02-23


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