| Home > Publications database > GeSn quantum wells as a platform for spin-resolved hole transport |
| Typ | Amount | VAT | Currency | Share | Status | Cost centre |
| APC | 3000.00 | 0.00 | EUR | 95.39 % | (Zahlung erfolgt) | ZB |
| APC | 145.00 | 0.00 | EUR | 4.61 % | (Zahlung erfolgt) | 236000 |
| Sum | 3145.00 | 0.00 | EUR | |||
| Total | 3145.00 |
| Journal Article | FZJ-2026-00214 |
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2025
Springer Nature
London
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Please use a persistent id in citations: doi:10.1038/s43246-025-00934-9 doi:10.34734/FZJ-2026-00214
Abstract: The nascent group IV GeSn alloys are highly attractive for spintronics applications, including quantum computing, due to their ability to enable highly scalable fabrication and all-electrical spin manipulation. In this work, we conduct an in-depth study of a two-dimensional hole gas in a Ge/GeSn quantum well, exhibiting the integer quantum Hall effect and distinct Shubnikov-de Haas oscillations. Emphasis is given to the determination of the Landé g-factor and its pronounced anisotropy in this two-dimensional system, revealing values significantly higher than those in conventional Ge or SiGe/Ge systems. Moreover, by modeling the spin-orbit interaction using the Iordanskii-Lyanda-Geller-Pikus theory, crucial cubic Rashba spin-orbit interaction coefficients, are extracted and their significance is highlighted. This work provides the experimental validation of the theoretically predicted enhancements in spin-orbit interaction and g-factors in GeSn alloys compared to Ge. Additionally, it delivers essential parameters for the design of hole spin devices, such as hole qubits, utilizing GeSn-based structures on the Si platform.
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