Journal Article

FZJ-2026-01446

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Optical and structural properties of p -doped Ge/SiGe multiple quantum wells for mid-infrared photonics

Calcaterra, S. ; Faverzani, M. ; Impelluso, D. ; Chrastina, D. ; Giani, R. ; Anzi, L. ; Bae, J. H.FZJ* ; Tassi, C. ; Buca, D.FZJ* ; Biagioni, P. ; Isella, G. ; Virgilio, M. ; Frigerio, J. (Corresponding author)

2025
Inst. Woodbury, NY

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Please use a persistent id in citations: doi:10.1103/9mm6-96nk  doi:10.34734/FZJ-2026-01446

Abstract: We present a detailed study of hole-doped Ge/SiGe multiple quantum wells as a promising material platformformid-infrared photonics. The heterostructures were grown on SiGe virtual substrates using low-energy plasmaenhancedchemical vapor deposition. Structural and compositional analyses via atom probe tomography andx-ray diffraction were employed to assess the crystal quality and retrieve the compositional profiles. The opticalresponse of the samples, in the 4–12-μm wavelength range, was investigated as a function of the temperature andcomplementary Hall-effect measurements were performed providing insights into the temperature evolution ofthe electrical transport properties. In addition, a well-established tight-binding model was used to reproduce andinterpret the experimental results starting from the calculated valence band structure.

Keyword(s): Basic research (1st) ; Condensed Matter Physics (2nd)

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)

Appears in the scientific report 2025

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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