Conference Presentation (Invited)

FZJ-2026-01474

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Towards 1-D conduction in gate-defined quantum point contacts on GeSn quantum wells

Kaul, P. (Corresponding author)FZJ* ; Karthein, J.FZJ* ; Buchhorn, J.FZJ* ; Kawano, T. ; Usubuchi, T. ; Ishihara, J. ; Rotaru, N. ; Grützmacher, D.FZJ* ; Zhao, Q.-T.FZJ* ; Moutanabbir, O. ; Kohda, M. ; Schäpers, T.FZJ* ; Buca, D.FZJ*

2025

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Please use a persistent id in citations: doi:10.34734/FZJ-2026-01474

Abstract: Towards 1-D conduction in gate-defined quantum point contacts on GeSn quantum wells

Keyword(s): Engineering, Industrial Materials and Processing (1st) ; Condensed Matter Physics (2nd)

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)
2. LASTSTEP - group-IV LASer and deTectors on Si-TEchnology Platform (101070208) (101070208)
3. DFG project G:(GEPRIS)537127697 - Thermoelektrische Eigenschaften von SiGeSn-Mikrobauelementen (537127697) (537127697)

Appears in the scientific report 2025

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Database coverage:

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