| Home > Publications database > Highly crystalline superconducting TiN resonators grown on thermally reconstructed sapphire |
| Journal Article | FZJ-2026-04635 |
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2026
IOP Publ.
Bristol
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Please use a persistent id in citations: doi:10.1088/1361-6668/aea939 doi:10.34734/FZJ-2026-04635
Abstract: High-quality crystalline growth of a thin film on sapphire requires sufficient substrate preparation,often achieved via aggressive chemical cleaning. Direct thermal reconstruction of the sapphire sub-strate via a CO2 laser beam may provide an alternative method to prepare the substrate for epitaxywithout the use of any chemical processing. In this work, we demonstrate that the thermal anneal-ing of sapphire into its (√31 × √31) R± 9◦ reconstruction is a valid alternative preparation tech-nique for sapphire substrates. TiN films grown via plasma-assisted molecular beam epitaxy uponthese substrates exhibit greater crystallinity than those grown on chemically-cleaned sapphire sub-strates. Superconducting resonators fabricated from these films exhibit similar performance, withmany possessing internal quality factors at single photon levels greater than 106 for both substratepreparation methods.
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