| Hauptseite > Publikationsdatenbank > Implementation and application of a DFT + U + V approach within the all-electron FLAPW method |
| Journal Article | FZJ-2026-04926 |
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2026
Inst.
Woodbury, NY
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Please use a persistent id in citations: doi:10.1103/7sqg-q7kr doi:10.34734/FZJ-2026-04926
Abstract: We present an implementation of the density-functional theory DFT + U + V formalism within the all-electron full-potential linearized augmented–plane-wave (FLAPW) method as implemented in the FLEUR code.The DFT + U + V formalism extends DFT, supplemented by the on-site Coulomb interaction U , to address localcorrelation effects in localized states by incorporating intersite Coulomb interaction terms V . It holds promisefor improving charge and bond disproportionation, charge and orbital ordering, charge-density-wave formation,charge transfer, and the intersite correlation resulting from hybridization between states of neighboring sites in asolid. U and V parameters are obtained from first principles using the constrained random-phase approximation(cRPA) by employing two different atom basis representations to project the screened Coulomb interaction:the Wannier and the muffin–tin basis functions. We investigate in detail the impact of the V term for typicalcovalently bonded materials like graphene, for bulk semiconductors such as silicon and germanium, and forcharge-transfer insulators like NiO. Our results demonstrate an improvement in accuracy of specific propertiesacross these systems, providing a framework for describing materials with different interaction regimes. Wecompare our DFT + U + V results using our cRPA parameter sets with (i) previous DFT + U + V calculationsemploying pseudopotential approximations, (ii) experimental results, and (iii) our GW results.
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