Journal Article

PreJuSER-10638

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ultraviolet light oxidation for magnetic tunnel junctions

Rottländer, P.FZJ* ; Kohlstedt, H.FZJ* ; Grünberg, P. A.FZJ* ; Girgis, P.FZJ*

2000
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/838

Abstract: Recently, ferromagnetic tunnel junctions attracted much interest because they exhibit large magnetoresistance effects up to Delta R/R=40% at room temperature. In this paper, an alternative approach will be presented, i.e., exposing the aluminum film to ultraviolet light during oxidation. The underlying mechanism can be explained in the framework of the Cabrera-Mott theory of oxidation. With UV assisted oxidation, magnetoresistance ratios of up to 22.5% at room temperature have been obtained in Ni80Fe20-Al(ox)-Co junctions. The resistivities were in the 1 k Omega mu m(2) range for junctions of 25-400 mu m(2). Barrier heights obtained by fitting to different theories will be discussed. (C) 2000 American Institute of Physics. [S0021-8979(00)55308-0].

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Festkörperforschung (IFF)

Research Program(s):

1. Festkörperforschung für die Informationstechnik (23.42.0)

Appears in the scientific report 2000
Notes: This version is available at the following URL: http://jap.aip.org

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