Journal Article

PreJuSER-11285

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ultrathin Ni Silicides with low contact resistance on Strained and Unstrained Silicon

Knoll, L.FZJ* ; Zhao, Q. T.FZJ* ; Habicht, S.FZJ* ; Urban, C.FZJ* ; Ghyselen, B. ; Mantl, S.FZJ*

2010
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/LED.2010.2041028

Abstract: Ultrathin Ni silicides were formed on silicon-on-insulator (SOI) and biaxially tensile strained SOI (SSOI) substrates. The Ni layer thickness crucially determines the silicide phase formation: With a 3-nm Ni layer, high-quality epitaxial NiSi2 layers were grown at temperatures > 450 degrees C, while NiSi was formed with a 5-nm-thick Ni layer. A very thin Pt interlayer, to incorporate Pt into NiSi, improves the thermal stability and the interface roughness and lowers the contact resistivity. The contact resistivity of epitaxial NiSi2 is about one order of magnitude lower than that of a NiSi layer on both As-and B-doped SOI and SSOI.

Keyword(s): J ; Contact resistance (auto) ; epitaxial NiSi2 (auto) ; Ni silicide (auto) ; strained silicon-on-insulator (SSOI) (auto)

Note: This work was supported in part by the German Federal Ministry of Education and Research via the MEDEA+ Project DECISIF(2T104) and in part by the Nanosil funding from the European Community under FP7 Grant 216171. The review of this letter was arranged by Editor C.-P. Chang.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)
2. NANOSIL - Silicon-based nanostructures and nanodevices for long term nanoelectronics applications (216171) (216171)

Appears in the scientific report 2010

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Database coverage:
JCR ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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