Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

Reuters, Benjamin; Kalisch, H; Vescan, A.; Heuken, M.; Holländer, Bernhard; Finken, M.; Wille, A.

doi:10.1063/1.4764342

Journal Article

FZJ-2013-01881

Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

Reuters, B. (Corresponding author) ; Finken, M. ; Wille, A. ; Holländer, B.FZJ* ; Heuken, M. ; Kalisch, H. ; Vescan, A.

2012
American Institute of Physics Melville, NY

Journal of applied physics 112(9), 093524 - (2012) [10.1063/1.4764342]

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Please use a persistent id in citations: http://hdl.handle.net/2128/5076 doi:10.1063/1.4764342

Abstract: Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30–62% Al, 5–29% In, and 23–53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

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