Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface

Nichau, Alexander; Schubert, Jürgen; Breuer, Uwe; Mücklich, A.; Mantl, Siegfried; Bernardy, Patric; Castro, G. R.; Holländer, Bernhard; von Borany, J.; Schnee, Michael; Besmehn, Astrid; Rubio-Zuazo, J.; Buca, Dan Mihai

doi:10.1063/1.4801324

Journal Article

FZJ-2013-02120

Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface

Nichau, A. (Corresponding author)FZJ* ; Schnee, M.FZJ* ; Schubert, J.FZJ* ; Besmehn, A.ZEA-3*FZJ* ; Rubio-Zuazo, J. ; Breuer, U.ZEA-3*FZJ* ; Bernardy, P.FZJ* ; Holländer, B.FZJ* ; Mücklich, A. ; Castro, G. R. ; von Borany, J. ; Buca, D. M.FZJ* ; Mantl, S.FZJ*

2013
American Institute of Physics Melville, NY

The journal of chemical physics 138(15), 154709 (2013) [10.1063/1.4801324]

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Please use a persistent id in citations: http://hdl.handle.net/2128/19023 doi:10.1063/1.4801324

Abstract: Rare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of lanthanum lutetium oxide based gate stacks is presented. Special attention is given to the silicate formation at temperatures typical for CMOS processing. The experimental analysis is based on hard x-ray photoemission spectroscopy complemented by standard laboratory experiments as Rutherford backscattering spectrometry and high-resolution transmission electron microscopy. Homogenously distributed La silicate and Lu silicate at the Si interface are proven to form already during gate oxide deposition. During the thermal treatment Si atoms diffuse through the oxide layer towards the TiN metal gate. This mechanism is identified to be promoted via Lu–O bonds, whereby the diffusion of La was found to be less important.

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