Journal Article

FZJ-2013-02679

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

Luong, G. V. (Corresponding author)FZJ* ; Wirths, S.FZJ* ; Stefanov, S. ; Holländer, B.FZJ* ; Schubert, J.FZJ* ; Conde, J. C. ; Stoica, T.FZJ* ; Breuer, U.-W.FZJ* ; Chiussi, S. ; Goryll, M. ; Buca, D. M.FZJ* ; Mantl, S.FZJ*

2013
American Institute of Physics Melville, NY

This record in other databases:  

Please use a persistent id in citations: http://hdl.handle.net/2128/16812  doi:10.1063/1.4807001

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Contributing Institute(s):

1. Analytik (ZEA-3)
2. Halbleiter-Nanoelektronik (PGI-9)
3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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Database coverage:
; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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