Journal Article

FZJ-2013-03162

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Molecular dynamics simulations of oxygen vacancy diffusion in SrTiO 3

Schie, M. (Corresponding author) ; Marchewka, A. ; Müller, T. ; De Souza, R. A. ; Waser, R.FZJ*

2012
IOP Publ. Bristol

This record in other databases:  

Please use a persistent id in citations: doi:10.1088/0953-8984/24/48/485002

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA - HPC (JARA-HPC)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)
2. Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM) (jpgi70_20120501) (jpgi70_20120501)

Appears in the scientific report 2013

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Database coverage:
; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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