Journal Article

PreJuSER-14122

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Charge Carrier Induced Increase of the Curie Temperature of EuO - Is there an Instrinsic Limit?

Mairoser, T. ; Schmehl, A. ; Melville, A. ; Heeg, T. ; Canella, L. ; Böni, P. ; Zander, W.FZJ* ; Schubert, J.FZJ* ; Shai, D. E. ; Monkman, E. J. ; Shen, K. M. ; Schlom, D. G. ; Mannhart, J.

2010
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/7278  doi:10.1103/PhysRevLett.105.257206

Abstract: Rare earth doping is the key strategy to increase the Curie temperature (T-C) of the ferromagnetic semiconductor EuO. The interplay between doping and charge carrier density (n), and the limit of the T-C increase, however, are yet to be understood. We report measurements of n and T-C of Gd-doped EuO over a wide range of doping levels. The results show a direct correlation between n and T-C, with both exhibiting a maximum at high doping. On average, less than 35% of the dopants act as donors, raising the question about the limit to increasing T-C.

Keyword(s): J

Note: We gratefully acknowledge discussions with L. H. Tjeng and thank T. Regier for his assistance in the XAS measurements. This work was supported by the DFG (TRR 80), the EC (oxIDes), AFOSR (FA9550-10-1-0123), and NSF (DMR-0820404).

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Experiment(s):

1. PGAA: Prompt gamma activation analysis (NL4b)

Appears in the scientific report 2010

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