Journal Article

FZJ-2014-04653

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO$_3$ Resistive Switching Memories

Fleck, K. (Corresponding Author) ; Bottger, U. ; Waser, R.FZJ* ; Menzel, S.FZJ*

2014
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/LED.2014.2340016

Abstract: In this letter, we present a study of the SET kinetics of bipolar switching SrTiO3-based resistive memory devices. Pulse measurements on a timescale from 1 (mu ) s to 1 s and voltage sweeps with sweep-rates up to 6 MV/s were performed showing a highly nonlinear correlation between voltage and time. An analytical model is presented that explains the interrelation of both experiments by a comparative analysis of the current–voltage characteristics.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

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Database coverage:
Current Contents - Life Sciences ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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