Engineering 180° ferroelectric domains in epitaxial PbTiO3 thin films by varying the thickness of the underlying (La,Sr)MnO3 layer

Jin, Lei; Vrejoiu, I.; Jia, Chun-Lin

doi:10.1063/1.4897144

Journal Article

FZJ-2014-05260

Engineering 180° ferroelectric domains in epitaxial PbTiO3 thin films by varying the thickness of the underlying (La,Sr)MnO3 layer

Jin, L. (Corresponding Author)FZJ* ; Jia, C.-L.FZJ* ; Vrejoiu, I.

2014
American Institute of Physics Melville, NY

Applied physics letters 105, 132903 (2014) [10.1063/1.4897144]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17287 doi:10.1063/1.4897144

Abstract: Epitaxial ferroelectric thin films of PbTiO3 (PTO) grown on top of nominally La0.7Sr0.3MnO3 (LSMO) submicron hillocks on Nb-doped SrTiO3 (100) substrate were investigated by means of scanning transmission electron microscopy. 180° ferroelectric domains were observed in the c -axis oriented PTO films. The formation and configuration of ferroelectric domains and domain walls were found to exhibit strong correlation with the thickness of the underlying LSMO hillocks. The domain walls start at the locations of the hillocks where the LSMO layer has a thickness of about 3 nm. Our results demonstrate that controlling the thickness variation (shape) of the LSMO hillocks can manipulate the position and density of the ferroelectric domain walls, which are considered to be the active elements for future nanoelectronics.

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