Journal Article

FZJ-2014-05320

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Band alignment at memristive metal-oxide interfaces investigated by hard x-ray photoemission spectroscopy

Lenser, C. (Corresponding Author)FZJ* ; Köhl, A.FZJ* ; Patt, M.FZJ* ; Schneider, C. M.FZJ* ; Waser, R.FZJ* ; Dittmann, R.FZJ*

2014
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/8027  doi:10.1103/PhysRevB.90.115312

Abstract: The electronic structure and band alignment at metal/oxide interfaces for nonvolatile memory applications are investigated by hard x-ray photoelectron spectroscopy (HAXPES) and DC transport measurements, using acceptor doped SrTiO3 as a model memristive oxide. Metal-insulator-metal (MIM) structures with a noble metal (Pt) top electrode form a Schottky barrier and exhibit rectifying properties, while a reactive metal (Ti) as top electrode shows symmetric I(V) characteristics and a flat band situation at the interface. The transition from rectifying to ohmic I(V) relations with increasing Ti thickness is discussed with respect to the electrochemical reaction at the interface, the band alignment at the electrode/oxide interface, and the slope of the energy bands across the MIM structure.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

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Database coverage:
; ; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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