Robust surface electronic properties of topological insulators:   Bi2Te3 films grown by molecular beam epitaxy

Plucinski, L.; Mussler, G.; Schneider, C. M.; Gruetzmacher, D.; Krumrain, J.; Suga, S.; Herdt, A.

doi:10.1063/1.3595309

Journal Article

Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy

Plucinski, L.FZJ* ; Mussler, G.FZJ* ; Krumrain, J.FZJ* ; Herdt, A.FZJ* ; Suga, S.FZJ* ; Gruetzmacher, D.FZJ* ; Schneider, C. M.FZJ*

2011
American Institute of Physics Melville, NY

Applied physics letters 98, 222503 (2011) [10.1063/1.3595309]

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Please use a persistent id in citations: http://hdl.handle.net/2128/7345 doi:10.1063/1.3595309

Abstract: The surface electronic properties of the important topological insulator Bi2Te3 are shown to be robust under an extended surface preparation procedure, which includes exposure to atmosphere and subsequent cleaning and recrystallization by an optimized in situ sputter-anneal procedure under ultrahigh vacuum conditions. Clear Dirac-cone features are displayed in high-resolution angle-resolved photoemission spectra from the resulting samples, indicating remarkable insensitivity of the topological surface state to cleaning-induced surface roughness. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595309]

Keyword(s): J

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Physics, Applied

Note: We acknowledge stimulating discussions with Caitlin Morgan on the course of editing the manuscript. Thanks are due to NRW Research School "Research with Synchrotron Radiation" funded by the Northrhine-Westphalia Ministry for Innovation, Science, Research, and Technology (Grant No. 321.2-8.03.06-58782)

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