Journal Article FZJ-2015-00509

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Competing strain relaxation mechanisms in epitaxially grown Pr$_{0.48}$Ca$_{0.52}$MnO$_{3}$ on SrTiO$_{3}$

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2014
AIP Publ. Melville, NY

APL materials 2(10), 106106 () [10.1063/1.4900817]

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Abstract: We investigated the impact of strain relaxation on the current transport of Pr0.48Ca0.52MnO3 (PCMO) thin films grown epitaxially on SrTiO3 single crystals by pulsed laser deposition. The incorporation of misfit dislocations and the formation of cracks are identified as competing mechanisms for the relaxation of the biaxial tensile strain. Crack formation leads to a higher crystal quality within the domains but the cracks disable the macroscopic charge transport through the PCMO layer. Progressive strain relaxation by the incorporation of misfit dislocations, on the other hand, results in a significant decrease of the activation energy for polaron hopping with increasing film thickness.

Classification:

Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015
Database coverage:
Creative Commons Attribution CC BY 3.0 ; DOAJ ; OpenAccess ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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