Journal Article

FZJ-2015-00509

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Competing strain relaxation mechanisms in epitaxially grown Pr$_{0.48}$Ca$_{0.52}$MnO$_{3}$ on SrTiO$_{3}$

Herpers, A. (Corresponding Author)FZJ* ; O’Shea, K. J. ; MacLaren, D. A. ; Noyong, M. ; Rösgen, B.FZJ* ; Simon, U. ; Dittmann, R.FZJ*

2014
AIP Publ. Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/9040  doi:10.1063/1.4900817

Abstract: We investigated the impact of strain relaxation on the current transport of Pr0.48Ca0.52MnO3 (PCMO) thin films grown epitaxially on SrTiO3 single crystals by pulsed laser deposition. The incorporation of misfit dislocations and the formation of cracks are identified as competing mechanisms for the relaxation of the biaxial tensile strain. Crack formation leads to a higher crystal quality within the domains but the cracks disable the macroscopic charge transport through the PCMO layer. Progressive strain relaxation by the incorporation of misfit dislocations, on the other hand, results in a significant decrease of the activation energy for polaron hopping with increasing film thickness.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; ; ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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