Journal Article

FZJ-2015-02596

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Suppressing Twin Formation in Bi $_{2}$ Se $_{3}$ Thin Films

Tarakina, N. V. (Corresponding Author) ; Schreyeck, S. ; Luysberg, M.FZJ* ; Grauer, S. ; Schumacher, C. ; Karczewski, G. ; Brunner, K. ; Gould, C. ; Buhmann, H. ; Dunin-Borkowski, R.FZJ* ; Molenkamp, L. W.

2014
Wiley-VCH Weinheim

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Please use a persistent id in citations: http://hdl.handle.net/2128/24495  doi:10.1002/admi.201400134

Abstract: The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete suppression of twin formation in the Bi2Se3 thin films and a perfect interface between the films and their substrates. The only type of structural defect that persists in the twin-free films is an antiphase domain boundary, which is associated with variations in substrate height. We also show that the substrate surface termination influences which family of twin domains dominates.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 42G - Peter Grünberg-Centre (PG-C) (POF2-42G41) (POF2-42G41)

Appears in the scientific report 2014

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