Journal Article/Review

FZJ-2015-02737

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png GaN:Co epitaxial layers grown by MOVPE

Šimek, P. ; Sedmidubský, D. ; Klímová, K. ; Mikulics, M.FZJ* ; Maryško, M. ; Veselý, M. ; Jurek, K. ; Sofer, Z. (Corresponding Author)

2015
Elsevier Amsterdam [u.a.]

This record in other databases:  

Please use a persistent id in citations: doi:10.1016/j.jcrysgro.2014.10.031

Abstract: We present a growth of GaN layers doped by cobalt using low pressure metalorganic vapor phase epitaxy on c-plane sapphire substrates. The in situ doping of GaN by Co was performed by the decomposition of bis(cyclopentadienyl)cobalt precursor. Three parameters, the temperature and pressure of the deposition and the Ga/Co ratio in the gas phase, influencing cobalt concentration were investigated. The obtained results were confronted with the thermodynamic predictions of Co solubility within GaN lattice and electronic structure calculations of GaN:Co. The magnetic properties of GaN:Co thin films were investigated using superconducting quantum interference device magnetometer. In addition, the layers were characterized by Raman and photoluminescence spectroscopy and atomic force microscopy. The concentration of Co was measured using electron microprobe and depth profile was measured using secondary ion mass spectroscopy. Room temperature ferromagnetic ordering was observed on the Co doped GaN layers.

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 522 - Controlling Spin-Based Phenomena (POF3-522) (POF3-522)

Appears in the scientific report 2015

---

Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---