Journal Article

PreJuSER-19583

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Interstitial Donor Codoping Method in (Ga,Mn)As to Increase Solubility of Mn and Curie Temperature

Fujii, H. ; Sato, K. ; Bergqvist, L. ; Dederichs, P. H.FZJ* ; Katayama-Yoshida, H.

2011
¯Oy¯o Butsuri-Gakkai Tokyo

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Please use a persistent id in citations: doi:10.1143/APEX.4.043003

Abstract: Based on first principles calculations, we propose a solubility control method of magnetic impurities in dilute magnetic semiconductors (DMSs). The low solubility of Mn in (Ga, Mn)As is experimentally and theoretically known. We show that donor atoms, such as Li, introduced at the interstitial sites in GaAs enhance the solubility of Mn. As a result, Mn can be doped to more than 20% in GaAs in the thermal equilibrium condition. The same effect can be seen when we dope Mn in GaAs with other interstitial donors, such as H, Na, K, Be, Mg, Ca, Cu, and Ag. (C) 2011 The Japan Society of Applied Physics

Keyword(s): J

Note: The authors would like to express their gratitude for the financial support from a Grant-in-Aid for Scientific Research for young researchers and on Innovative Areas "Materials Design through Computics: Complex Correlation and Non-Equilibrium Dynamics", a Global Center of Excellence program "Core Research and Engineering of Advanced Materials-Interdisciplinary Education Center for Materials Science", and the Japan Science and Technology Agency Strategic Japanese-German Cooperative Program "Computational design and evaluation of spintronics materials".

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Contributing Institute(s):

1. Theoretische Nanoelektronik (PGI-2)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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