Journal Article

FZJ-2015-05156

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Impact of Si cap, strain and temperature on the hole mobility of (s)Si/sSiGe/(s)SOI quantum-well p-MOSFETs

Yu, W. ; Zhang, B. ; Liu, C. ; Zhao, Y. (Corresponding author) ; Wu, W. R. ; Xue, Z. Y. ; Chen, M. ; Buca, D.FZJ* ; Hartmann, J.-M. ; Wang, X.FZJ* ; Zhao, Q. T. (Corresponding author)FZJ* ; Mantl, S.FZJ*

2014
Elsevier [S.l.] @

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Please use a persistent id in citations: doi:10.1016/j.mee.2013.06.015

Abstract: Quantum-well p-MOSFETs are fabricated on (strained) Si/strained SiGe/(strained) SOI hetero-structure substrates and the effects of Si cap, strain and temperature on hole mobility are investigated. The Si cap layer which behaves as a passivation layer for the SiGe improves the hole mobility by suppressing the scattering due to charges in the high-κ layer and at the high-κ interface. High strain in SiGe enhances the Ge interdiffusion during the thermal process, leading to reduced hole mobilities. The transistors are also characterized at very low temperatures and the scattering mechanism is discussed.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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