Journal Article

PreJuSER-20462

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Selective Adsorption of C60 on Ge/Si Nanostructures

Korte, S.FZJ* ; Romanyuk, K.FZJ* ; Schnitzler, B.FZJ* ; Cherepanov, V.FZJ* ; Voigtländer, B.FZJ* ; Filimonov, S. N.FZJ*

2012
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/7442  doi:10.1103/PhysRevLett.108.116101

Abstract: Selective adsorption of C-60 on nanoscale Ge areas can be achieved, while neighboring Si(111) areas remain uncovered, if the whole surface is initially terminated by Bi. Fullerene chemisorption is found at Bi vacancies which form due to partial thermal desorption of the Bi surfactant. The growth rate and temperature dependence of the C-60 adsorption were measured using scanning tunneling microscopy and are described consistently by a rate equation model. The selectivity of the C-60 adsorption can be traced back to an easier vacancy formation in the Bi layer on top of the Ge areas compared to the Si areas. Furthermore, it is also possible to desorb C-60 from Ge areas, allowing the use of C-60 as a resist on the nanoscale.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Funktionale Nanostrukturen an Oberflächen (PGI-3)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2012

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Database coverage:
; ; ; Current Contents - Social and Behavioral Sciences ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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