Journal Article

PreJuSER-21358

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Non-volatile gated variable resistor based on doped La2CuO4+delta and SrTiO3 heterostructures

Weber, D.FZJ* ; Poppe, U.FZJ*

2012
American Institute of Physics Melville, NY

This record in other databases:    

Please use a persistent id in citations: http://hdl.handle.net/2128/7478  doi:10.1063/1.3691599

Abstract: Gated variable resistors were manufactured by depositing epitaxial heterostructures of doped La2CuO4+delta and SrTiO3 layers. Their conductance change as function of write current I and write time t followed a simple empirical law of the form Delta G/G = CI(A)t(B). This behavior is in agreement with ionic transport that accelerates exponentially with electrical field strength. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691599]

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

---

Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2012

---

Database coverage:
; ; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---