Journal Article

PreJuSER-23920

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Band-gap profiling in amorphous silicon-germanium solar cells

Lundszien, D.FZJ* ; Finger, F.FZJ* ; Wagner, H.FZJ*

2002
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1920  doi:10.1063/1.1456548

Abstract: Profiled buffer layers at the interfaces of amorphous silicon-germanium (a-SiGe:H) solar cells are routinely used to avoid band-gap discontinuities and high-defect densities at the p/i and i/n interfaces. It is shown that such profiled a-SiGe:H buffer layers can be replaced by a constant band-gap a-Si:H buffer, an inverse profiled a-SiGe:H buffer, or even a 3-nm-thin (delta) buffer at some distance away from the interface without losses in the open-circuit voltage V-OC and fill factor while maintaining the same short current density j(SC). In view of these results, common model assumptions for a-SiGe:H solar cells have to be revised. (C) 2002 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Photovoltaik (IPV)

Research Program(s):

1. Photovoltaik (E02)

Appears in the scientific report 2002
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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