Dissertation / PhD Thesis/Book

PreJuSER-26630

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Selbstassemblierte Nanostrukturierung ultradünner Silizidschichten und Entwicklung von Nano-MOSFET-Bauelementen

Kluth, P. (Corresponding author)FZJ*

2002
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag Jülich

Please use a persistent id in citations: http://hdl.handle.net/2128/259

Report No.: Juel-3994

Abstract: Due to its low resistivity, high scalability and high thermal stability, CoSi$_{2}$ is widely used as a contact and interconnect material in silicon microelctronics. In this thesis a self-assembly process for fabrication of CoSi$_{2}$-nanostructures is investigated. These structures can be used as building blocks for advanced microelectronic devices. The process is based on anisotropic diffusion in a stress field generated along the edge of a mask consisting of SiO$_{2}$ and Si$_{3}$N$_{4}$. Using local oxidation narrow wires and uniform gaps with dimensions down to 20 nm were produced from 20-30 nm thick single-crystalline, epitaxial CoSi$_{2}$-layers. Gaps with dimensions of approximately 100 nm were generated during the silicide formation in a solid-phase reaction. Using these nanostructures, we fabricated planar 70 nm gate-length Schottky barrier MOSFETs on silicon-on-insulator substrates. These devices can be driven as both p-channel and n-channel MOSFETs without complementary substrate doping and show good I-V characteristics and a transconductance of 200 mS mm$^{-1}$ in the n-channel mode.

Note: Record converted from VDB: 12.11.2012
Note: Aachen, Techn., Hochsch., Diss., 2002

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2002

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Database coverage:

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