Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

Kasama, T.; Gustafsson, A.; Sadowski, J.; Duchamp, M.; Thuvander, M.; Gontard, L. C.; Yazdi, S.; Kovács, A.; Dunin-Borkowski, Rafal; Siusys, A.

doi:10.1063/1.4927623

Journal Article

FZJ-2016-00089

Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

Kasama, T. (Corresponding author) ; Thuvander, M. ; Siusys, A. ; Gontard, L. C. ; Kovács, A.FZJ* ; Yazdi, S. ; Duchamp, M. ; Gustafsson, A. ; Dunin-Borkowski, R.FZJ* ; Sadowski, J.

2015
American Inst. of Physics Melville, NY

Journal of applied physics 118(5), 054302 - (2015) [10.1063/1.4927623]

This record in other databases:

Please use a persistent id in citations: http://hdl.handle.net/2128/17101 doi:10.1063/1.4927623

Abstract: Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 °C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography. Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga0.82Mn0.18 nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts of Mn (22 ± 4 at. ppm) are also distributed randomly in the NW bodies without forming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction in the MBE chamber, since they are partially embedded in neck regions of the NWs. The Ga0.82Mn0.18 nanocrystals and the low Mn concentration in the NW bodies are insufficient to induce a ferromagnetic phase transition, suggesting that it is difficult to have high Mn contents in GaAs even in 1-D NW growth via the vapor-liquid-solid process.

Classification: