Journal Article

FZJ-2016-01769

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Field Emission at Grain Boundaries: Modeling the Conductivity in Highly Doped Polycrystalline Semiconductors

Sommer, N.FZJ* ; Hüpkes, J. (Corresponding author)FZJ* ; Rau, U.FZJ*

2016
American Physical Society College Park, Md. [u.a.]

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Please use a persistent id in citations: http://hdl.handle.net/2128/9906  doi:10.1103/PhysRevApplied.5.024009

Abstract: In this contribution, we elaborate a conductivity model for highly doped polycrystalline semiconductors. The prominent feature of the model is the description of grain-boundary scattering by field emission, i.e., quantum-mechanical tunneling of electrons through potential barriers at grain boundaries. For this purpose, we adapt a theory of Stratton [Theory of field emission from semiconductors, Phys. Rev. 125, 67 (1962)] to double Schottky barriers at grain boundaries. We provide strong evidence that field emission rather than the predominantly applied thermionic emission is the dominant transport path across grain boundaries in semiconductors with carrier concentrations exceeding approximately 1019  cm−3. We obtain a comprehensive conductivity model for highly doped polycrystalline semiconductors by combining field emission with two intragrain scattering mechanisms, that are ionized-impurity and electron-phonon scattering. The model is applied to a wide range of literature data in order to show its applicability and explanatory power. The literature data comprise, in particular, transparent conductive oxides with a special emphasis on aluminum-doped ZnO.

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Contributing Institute(s):

1. Photovoltaik (IEK-5)

Research Program(s):

1. 121 - Solar cells of the next generation (POF3-121) (POF3-121)

Appears in the scientific report 2016

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Database coverage:
; ; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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