Field Emission at Grain Boundaries: Modeling the Conductivity in Highly Doped Polycrystalline Semiconductors

Field Emission at Grain Boundaries: Modeling the Conductivity in Highly Doped Polycrystalline Semiconductors - FZJ-2016-01769

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Sommer PhysRevAppl 2016 Grain boundary tunneling model for polycrystalline semiconductors

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Sommer PhysRevAppl 2016 Grain boundary tunneling model for polycrystalline semiconductors.gif (icon)	[12.45 KB] 29 Feb 2016, 14:31	OpenAccess
Sommer PhysRevAppl 2016 Grain boundary tunneling model for polycrystalline semiconductors.jpg (icon-1440)	[264.39 KB] 29 Feb 2016, 14:31	OpenAccess
Sommer PhysRevAppl 2016 Grain boundary tunneling model for polycrystalline semiconductors.jpg (icon-180)	[25.05 KB] 29 Feb 2016, 14:31	OpenAccess
Sommer PhysRevAppl 2016 Grain boundary tunneling model for polycrystalline semiconductors.jpg (icon-640)	[264.39 KB] 29 Feb 2016, 14:31	OpenAccess
Sommer PhysRevAppl 2016 Grain boundary tunneling model for polycrystalline semiconductors.pdf	[1,023.27 KB] 29 Feb 2016, 14:31	OpenAccess
Sommer PhysRevAppl 2016 Grain boundary tunneling model for polycrystalline semiconductors.pdf (pdfa)	[2.07 MB] 29 Feb 2016, 14:31	OpenAccess

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