Journal Article

PreJuSER-32037

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Statistical model for prebreakdown current jumps and breakdown caused by single traps in magnetic tunnel junctions

Das, J. ; Degraeve, R. ; Stein, S.FZJ* ; Kohlstedt, H.FZJ* ; Groeseneken, C. J. ; Borghs, G. ; de Boeck, J.

2003
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17211  doi:10.1063/1.1592300

Abstract: To obtain reliable magnetic tunnel junctions (MTJs) for sensor and memory applications, the quality of the Al2O3 tunnel barrier is extremely important. Here, we studied the reliability of MTJs with a 1.6 nm Al2O3 tunnel barrier formed by ultraviolet light assisted oxidation. In the stress measurements, prebreakdown current jumps and, finally, breakdown are observed. We show, by using statistics, that both the current jumps and the final breakdown can be attributed to single trap generation. Moreover, we can relate the current jump height to the trap location. In this way, we reveal the breakdown mechanism in MTJs and illustrate the importance of reliability studies. (C) 2003 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektrokeramische Materialien (IFF-EKM)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2003

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Database coverage:

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