Journal Article

PreJuSER-32047

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png The thickness dependence of leakage current in thin films

Schroeder, H.FZJ* ; Schmitz, S.FZJ*

2003
American Institute of Physics Melville, NY

This record in other databases:  

Please use a persistent id in citations: http://hdl.handle.net/2128/1243  doi:10.1063/1.1629141

Abstract: The leakage current through high-permittivity perovskite thin films in the nanometer range is of great technological interest because of the possible applications of these insulating films in future submicroelectronic devices such as dielectrics in Gbit dynamic random access memories or gate oxides in metal-oxide-semiconductor field-effect transistors. The experimental result of decreasing leakage current with decreasing thickness of the dielectric for the same externally applied field can be described by using a model combining thermionic emission at the electrode/dielectric interface and a low-mobility, high-permittivity dielectric with low-permittivity layers at the interfaces, the so-called dead layers. (C) 2003 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

---

Contributing Institute(s):

1. Elektrokeramische Materialien (IFF-EKM)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2003
Notes: This version is available at the following Publisher URL: http://apl.aip.org

---

Database coverage:

---