Journal Article

PreJuSER-32099

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Resistive switching in metal-ferroelectric-metal junctions

Rodriguez-Contreras, J. ; Kohlstedt, H. ; Poppe, U.FZJ* ; Waser, R.FZJ* ; Buchal, C.FZJ* ; Pertsev, N. A.

2003
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1062  doi:10.1063/1.1627944

Abstract: The aim of this work is to investigate the electron transport through metal-ferroelectric-metal (MFM) junctions with ultrathin barriers in order to determine its dependence on the polarization state of the barrier. To that end, heteroepitaxial Pt/Pb(Zr0.52Ti0.48)O-3/SrRuO3 junctions have been fabricated on lattice-matched SrTiO3 substrates. The current-voltage (I-V) characteristics of the MFM junctions involving a few-nanometer-thick Pb(Zr0.52Ti0.48)O-3 barriers have been recorded at temperatures between 4.2 K and 300 K. Typical I-V curves exhibit reproducible switching events at well-defined electric fields. The mechanism of charge transport through ultrathin barriers and the origin of the observed resistive switching effect are discussed. (C) 2003 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Mikrostrukturforschung (IFF-IMF)

Research Program(s):

1. Kondensierte Materie (M02)

Appears in the scientific report 2003
Notes: Nachtrag
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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