Amorphous silicon - A promising material for diodes with ultra thin absorber

Stiebig, H.; Jun, J. H.; Büchner, H. J.; Mandryka, V.; Jäger, G.; Bunte, E.

Journal Article

Amorphous silicon - A promising material for diodes with ultra thin absorber

Stiebig, H.FZJ* ; Mandryka, V. ; Bunte, E.FZJ* ; Büchner, H. J. ; Jun, J. H.FZJ* ; Jäger, G.

2003
INOE & INFM Bucharest

Journal of optoelectronics and advanced materials 5, 1305 (2003)

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Please use a persistent id in citations: http://hdl.handle.net/2128/2761

Abstract: Novel interferometers for length and displacement measurements based on sampling an optical standing wave will be presented. The interference of two laser beams propagating in opposite direction results in a sinusoidal light intensity profile, which can be detected by thin transparent photodiodes based on amorphous silicon. Two individual detectors positioned on he optical axis of a standing wave allow bi-directional fringe counting. The operation principle of set-ups consisting of two individual nip-photodiodes on one hand and a phase sensitive transparent photodiode based on two integrated nip-diodes on the other hand will be discussed. With both set-ups Lissajous figures are detected demonstrating the feasibility of the new concept for length and displacement measurements.

Keyword(s): J ; amorphous silicon (auto) ; photodiode (auto) ; photodetector (auto) ; interferometer (auto)