Journal Article

PreJuSER-3983

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3

Menke, T.FZJ* ; Meuffels, P.FZJ* ; Dittmann, R.FZJ* ; Szot, K.FZJ* ; Waser, R.FZJ*

2009
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17262  doi:10.1063/1.3100209

Abstract: We succeeded in the separation of bulk and interface contributions to the electroforming and resistive switching behavior of Pt/STO(Fe)/Nb:STO devices by performing impedance spectroscopy. Two distinctive features observed in the impedance spectra could be assigned to the STO(Fe) bulk and to the depletion layer of the Pt/STO(Fe) Schottky contact. We attribute the resistance change during the dc forming process to a local bypassing of the depletion layer caused by oxygen effusion to the environment. By comparing the impedance spectra in the resistive "on" and "off" states, we propose that the resistance of the STO(Fe)/Nb:STO interface locally changes during the switching process.

Keyword(s): J ; effusion (auto) ; electric impedance (auto) ; electroforming (auto) ; iron (auto) ; niobium (auto) ; platinum (auto) ; Schottky barriers (auto) ; strontium compounds (auto) ; switching (auto)

Note: We thank R. Muenstermann and K. Shibuya for helpful discussions and Intel Inc. for financial support.

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2009

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Database coverage:

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