Journal Article

PreJuSER-40366

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Interference ferromagnet/semiconductor/ferromagnet spin field-effect transistor

Schäpers, T.FZJ* ; Nitta, J. ; Heersche, H. B. ; Takayanagi, H.

2001
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/1987  doi:10.1103/PhysRevB.64.125314

Abstract: An interference ferromagnet/semiconductor/ferromagnet transistor is proposed, where the relative conductance difference between parallel and antiparallel magnetization oscillates as a function of gate voltage. The characteristics of a one-dimensional as well as a two-dimensional structure are calculated and compared. In both cases the interferences result in an enhanced spin signal. It is shown that by using the spin filtering effect of an interface barrier the signal can be further increased.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Halbleiterschichtsysteme und Mesoskopische Strukturen (29.89.0)

Appears in the scientific report 2001
Notes: This version is available at the following Publisher URL: http://prb.aps.org

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Database coverage:

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