Journal Article

PreJuSER-40408

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png High temperature oxidation of CoAl(100)

Rose, V.FZJ* ; Ibach, H.FZJ* ; Podgursky, V.FZJ* ; Costina, I. ; Franchy, R.FZJ*

2005
Elsevier Amsterdam

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Please use a persistent id in citations: doi:10.1016/j.susc.2004.12.028

Abstract: We have employed Auger electron spectroscopy (AES), high resolution electron energy loss spectroscopy (EELS), low energy electron diffraction (LEED) and scanning tunneling microscopy (STM) to investigate the growth of an Al2O3 film on CoAl(1 0 0). While exposure to oxygen at room temperature leads to the formation of amorphous alumina, subsequent annealing at higher temperatures results in the growth of well-ordered theta-Al2O3. Well-ordered Al2O3 films are also formed by oxidation at temperatures of 800 K and above. The oxide is characterized by Fuchs-Kliewer modes at around 430, 630, 780 and 920 cm(-1). Oxide islands grow in two sets of domains perpendicular to each other. Under ultra-high vacuum conditions, self-limiting thickness of the oxide layer (9-10 Angstrom) has been found. The band gap of the theta-Al2O3 film on CoAl(1 0 0) is 4.3-4.5 eV. (C) 2005 Elsevier B.V. All rights reserved.

Keyword(s): J ; AES (auto) ; LEED (auto) ; EELS (auto) ; STM (auto) ; oxidation (auto) ; cobalt (auto) ; aluminum (auto) ; alumina (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005

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