Journal Article

PreJuSER-40816

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Adjustable ultraviolet sensitive detectors based on amorphous silicon

Topic, M. ; Stiebig, H.FZJ* ; Krause, M.FZJ* ; Wagner, H.FZJ*

2001
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1930

Abstract: Thin-film detectors made of hydrogenated amorphous silicon (LI-Si:H) and amorphous silicon carbide (a-SiC:H) with adjustable sensitivity in the ultraviolet (UV) spectrum were developed. Thin PIN diodes deposited on glass substrates in N-I-P layer sequence with a total thickness of down to 33 nm and a semitransparent Ag front contact were fabricated. The optimized diodes with a 10 nm Ag contact exhibit spectral response values above 80 mA/W in the wavelength range from 295 to 395 nm with a maximum of 91 mA/W at 320 nm, For longer wavelengths, the spectral response drops by 50% at 450 nm. Increasing the thickness of the Ag front contact leads to a narrowing of the spectral response at around 320 nm, which allows the adjustment from a broad UV to a selective UV-B-sensitive detector. (C) 2001 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Photovoltaik (IPV)

Research Program(s):

1. Grundlagen und Technologie von Dünnschichtsolarzellen (30.90.0)

Appears in the scientific report 2001
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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