Journal Article

PreJuSER-46658

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Influence of grain-boundary defects on electric transport in CeRhSn with a non-Fermi-liquid ground state

Slebarski, E. C. ; Szot, K.FZJ* ; Gamza, M. ; Penkalla, H.-J.FZJ* ; Breuer, U.FZJ*

2005
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/2189  doi:10.1103/PhysRevB.72.085443

Abstract: Measurements by atomic force microscopy reported for a polycrystalline CeRhSn sample show nanometer-sized grains consisting of crystalline components. The grains are separated by a grain boundary. The high-resolution electron microscopy and secondary-ion mass spectrometry were used to determine homogeneity of the grains and the grain boundary. The grains are homogeneous up to about 60% of the major phase, with slightly off-stoichiometric phases constituting the balance, whereas the volume fractions of intercrystalline components are strongly inhomogeneous and off stoichiometric. We argue that there is possibly a ballistic transport of electrons through an interface between the grains, which strongly modifies the resistivity of the CeRhSn stoichiometric grains, which is non-Fermi-liquid in character.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Zentralabteilung für Chemische Analysen (ZCH)
2. Elektronische Materialien (IFF-IEM)
3. Werkstoffstruktur und Eigenschaften (IWV-2)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005
Notes: This version is available at the following Publisher URL: http://publish.aps.org

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