Journal Article

PreJuSER-47460

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contact mode potentiometric measurements with an atomic force microscope on high resistive perovskite thin films

Reichenberg, B. ; Tiedke, S. ; Peter, F.FZJ* ; Waser, R.FZJ* ; Tappe, S. ; Schneller, T.

2005
Elsevier Science Amsterdam [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.jeurceramsoc.2005.03.195

Abstract: We have investigated the potential distribution on barium titanate thin filius with ail atomic force microscope in contact mode to find answers to the important question of local electric conductivity. A detailed knowledge about the electrical transport mechanisms is very important to receive a sound operation for highly integrated circuits such as non-volatile memory cells. With this paper we present an advanced method to perform these potential scans in galvanic contact. Key element of the set-up is an optimized electrometer amplifier which has an electronically reduced input capacitance avoiding the work function influence on the surface potential scan. To demonstrate the capability of our set-up we present example measurements performed on thermally reduced BaTiO3 thin films. (c) 2005 Elsevier Ltd. All rights reserved.

Keyword(s): J ; electrical properties (auto) ; atomic force microscope (auto) ; defects (auto) ; surfaces (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005

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