Hauptseite > Publikationsdatenbank > Half-metallic ferromagnets for magnetic tunnel junctions by ab initio calculations |
Journal Article | PreJuSER-48561 |
; ;
2005
APS
College Park, Md.
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Please use a persistent id in citations: http://hdl.handle.net/2128/1421 doi:10.1103/PhysRevB.72.174428
Abstract: Using theoretical arguments, we show that, in order to exploit half-metallic ferromagnets in tunneling magnetoresistance (TMR) junctions, it is crucial to eliminate interface states at the Fermi level within the half-metallic gap; contrary to this, no such problem arises in giant magnetoresistance elements. Moreover, based on an a priori understanding of the electronic structure, we propose an antiferromagnetically coupled TMR element based on half-metallic zinc-blende chalcogenides, in which interface states are eliminated, as a paradigm of materials design from first principles. Our conclusions are supported by ab initio calculations.
Keyword(s): J
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