Journal Article

PreJuSER-49260

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Bound polarons in semiconductor nanostructures

Woggon, U. ; Miller, D. ; Kalina, F.FZJ* ; Gerlach, B. ; Kayser, D. ; Leonardi, K. ; Hommel, R. A. E.

2003
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/2024  doi:10.1103/PhysRevB.67.045204

Abstract: Bound polarons are discrete, confined electronic states, spatially localized due to a local potential V(r) but sharing a common phonon state of the surrounding crystal. We study the energy states of polarons bound in a potential and determine the local optical absorption spectrum up to first-order time-dependent perturbation theory with respect to the electron-photon interaction. The model is applied to describe the optical properties of submonolayer CdSe insertions epitaxially grown between ZnSe layers. As a typical signature of bound polarons we found excited-state energies equidistantly separated by the LO phonon energy and with optical transition probabilities determined by the anisotropies in V(r).

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2003
Notes: Nachtrag
Notes: This version is available at the following Publisher URL: http://prb.aps.org

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