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| Hauptseite > Publikationsdatenbank > A comparison of model calculations and experimental results on photoluminescence energy and open circuit voltage of µc-Si:H solar cells |
| Hauptseite > Publikationsdatenbank > A comparison of model calculations and experimental results on photoluminescence energy and open circuit voltage of µc-Si:H solar cells |
| Journal Article | PreJuSER-49706 |
; ; ; ;
2005
INOE & INFM
Bucharest
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Please use a persistent id in citations: http://hdl.handle.net/2128/2773
Abstract: A simple model is proposed to calculate photoluminescence (PL) spectra and open circuit voltages (V-oc) in thin film p-i-n microcrystalline silicon (mu c-Si:H) solar cells with different structural compositions, as a function of temperature. By using a new technique, namely voltage-modulated PL on solar cells, experimental data are obtained that can be directly compared with the model. The model is based on the distributions of electrons and holes in quasi-equilibrium conditions. Recombination between the two distributions determines the PL band (energy and width of the spectrum). A symmetrical density of states distribution (DOS) described by a superposition of a DOS like that in c-Si and band tail states for the conduction and valence bands is assumed, The best agreement between the model calculations and experimental results for two solar cells with different structural properties is obtained by using an E-o approximate to 0.031 eV for the slope of both exponential band tail states.
Keyword(s): J ; photoluminescence (auto) ; computer simulations (auto) ; mu c-Si : H (auto) ; solar cells (auto) ; silicon (auto)
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