Journal Article

PreJuSER-50079

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Rashba effect in InGaAs/InP parallel quantum wires

Guzenko, V. A.FZJ* ; Knobbe, J.FZJ* ; Hardtdegen, H.FZJ* ; Schäpers, T.FZJ* ; Bringer, A.FZJ*

2006
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1431  doi:10.1063/1.2165279

Abstract: We report on the Rashba effect in InGaAs/InP quantum wires with an effective width ranging from 1.18 mu m down to 210 nm. By measuring 160 wires in parallel universal conductance, fluctuations could be suppressed so that the characteristic beating effect in the magnetorestistance was observable down to very low magnetic fields. A characteristic shift of the nodes in the beating pattern was found for decreasing wire width. By assuming a realistic soft-wall potential, the experimentally observed node positions could be reproduced. For the range of measured wires, our study confirms that the Rashba coupling parameter does not change with wire width.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Theorie I (IFF-TH-I)
2. Center of Nanoelectronic Systems for Information Technology (CNI)
3. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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