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| Hauptseite > Publikationsdatenbank > Protected Nanoelectrodes of two different Metals with 30 nm Gap-width and Access-window |
| Hauptseite > Publikationsdatenbank > Protected Nanoelectrodes of two different Metals with 30 nm Gap-width and Access-window |
| Journal Article | PreJuSER-51341 |
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2006
Elsevier
[S.l.] @
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Please use a persistent id in citations: doi:10.1016/j.mee.2005.12.023
Abstract: Reproducible fabrication of 30 nm metallic nanogaps on silicon chips and their electrochemical characterization are presented. The fabrication of the chip is a combination of an optical lithography step and two electron-beam (e-beam) steps. An optimized adhesion layer/metal layer combination (Ti/Pt/Au) and an adopted two layer e-beam resist are used. Specifically the chip has been covered with different protection layers, access windows located on top of the nanogaps, calibration electrodes and contact pads, respectively. After characterization of the gaps and of the protection layer in 0.1 M H2SO4 aqueous electrolyte, the deposition of Cu onto the nanogaps was demonstrated successfully. (c) 2006 Elsevier B.V. All rights reserved.
Keyword(s): J ; nanogaps (auto) ; cyclic voltammetry (auto) ; protection layer (auto) ; electrochemistry (auto)
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