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| Journal Article | PreJuSER-52012 |
; ; ; ;
2000
American Institute of Physics
Melville, NY
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Please use a persistent id in citations: http://hdl.handle.net/2128/2340
Abstract: The effect of electron cyclotron resonance plasma cleaning on the contact resistance between a superconducting Nb layer and a two-dimensional electron gas in a strained InxGa1-xAs/InP heterostructure is investigated. Cleaning by a He/H plasma results in a rough semiconductor surface and a high interface resistance. In contrast, by using a pure He plasma a smooth semiconductor surface with a considerably lower interface resistance is obtained. (C) 2000 American Institute of Physics. [S0021-8979(00)10119-7].
Keyword(s): J
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