Journal Article

PreJuSER-52315

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Thickness dependence of dielectric properties in bismuth layer-structured dielectrics

Takahasi, K. ; Suzuki, M. ; Kojima, T. ; Watanabe, T.FZJ* ; Sakashita, Y. ; Kato, K. ; Sakata, O. ; Sumitani, K. ; Funakubo, H.

2006
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1028  doi:10.1063/1.2336626

Abstract: c-axis-oriented epitaxial SrBi4Ti4O15 and CaBi4Ti4O15 films having natural superlattice structure were grown on (001)(c)SrRuO3 parallel to(001)SrTiO3 substrates by metal organic chemical vapor deposition. SrBi4Ti4O15 films suffer no degradation with a dielectric constant of 200 down to a film thickness of 15 nm, which corresponds to four unit cells. Temperature coefficients of capacitance were low enough despite their high dielectric constant. They exhibited stable capacitance and superior insulating properties against applied electric field, irrespective of film thickness. These results open the door to designable size-effect-free materials with high dielectric constant having bias- and temperature-independent characteristics together with superior electrical insulation for high-density capacitor applications. (c) 2006 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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