Journal Article

PreJuSER-52403

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Modulation doped SiGe-Si MQW for low-voltage high speed modulators at 1.3 mum

Vonsovici, A. ; Vescan, L.FZJ*

1999
IEEE New York, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/2349

Abstract: We propose a new type of light modulator at 1.3 and 1.55 mu m using a delta-modulation-doped SiGe-Si multiple-quantum-well structure (delta-MDMQW) integrated in a low-loss silicon-on-insulator (SOI) waveguide, The structure is embedded in the intrinsic region of a vertical p-i-n diode realized on SOI substrate. We present theoretical calculation of the effective index modulation determined by the variation of the confined hole concentration with an applied external field, A practical device is proposed and a calculation of optical modulation efficiency is presented, Estimation of on-off switching time based on evaluation of characteristic time of emission from localized levels in quantum wells and RC characteristics of the device are presented.This device presents the advantage of a broad optical bandwidth in comparison to the modulators based on quantum-confined Stark effect, low insertion loss, high-speed (above 1 GHz), and full compatibility with silicon technology.

Keyword(s): J ; charge transfer devices (auto) ; electrooptic modulation (auto) ; integrated optoelectronics (auto) ; optical strip waveguide components (auto) ; phase modulation (auto) ; quantum-well devices (auto) ; silicon-on-insulator technology (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Schicht- und Ionentechnik (ISI)

Research Program(s):

1. Halbleiterschichtsysteme und Mesoskopische Strukturen (29.89.0)

Appears in the scientific report 2000
Notes: This version is available at the following Publisher URL: http://ieeexplore.ieee.org/Xplore/dynhome.jsp

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