Low-Frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes

Lin, Y.; Chen, Z.; Appenzeller, J.; Knoch, J.; Avouris, P.

doi:10.1021/nl052528d

Journal Article

PreJuSER-52765

Low-Frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes

Lin, Y. ; Appenzeller, J. ; Knoch, J.FZJ* ; Chen, Z. ; Avouris, P.

2006
ACS Publ. Washington, DC

Nano letters 6, 930 - 936 (2006) [10.1021/nl052528d]

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Please use a persistent id in citations: http://hdl.handle.net/2128/2036 doi:10.1021/nl052528d

Abstract: We present a systematic study on low-frequency current fluctuations of nanodevices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of transport carriers present in the system. However, the 1/f noise level per carrier is not larger than that of most bulk conventional semiconductors, e.g., Si. The pronounced noise level observed in nanotube devices simply reflects on the small number of carriers involved in transport. These results not only provide the basis to quantify the noise behavior in a one-dimensional transport system but also suggest a valuable way to characterize low-dimensional nanostructures based on the 1/f fluctuation phenomenon.

Keyword(s): Electrochemistry (MeSH) ; Nanotubes, Carbon: chemistry (MeSH) ; Semiconductors (MeSH) ; Nanotubes, Carbon ; J