Journal Article

PreJuSER-52769

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities

Lin, Y. ; Appenzeller, J. ; Knoch, J.FZJ* ; Avouris, P.

2005
IEEE New York, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/2038  doi:10.1109/TNANO.2005.851427

Abstract: State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky-barrier-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we have fabricated high-performance enhancement-mode CNFETs exhibiting n- or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-State performance and a steep subthreshold swing (S = 63 mV/dec). The device design allows for aggressive oxide thickness and gate-length scaling while maintaining the desired device characteristics.

Keyword(s): J ; carbon nanotube (auto) ; doping (auto) ; field-effect transistor (auto) ; Schottky barrier (SB) (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005
Notes: Nachtrag
Notes: This version is available at the following Publisher URL: http://ieeexplore.ieee.org/Xplore/dynhome.jsp

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